Properties of sputter-grown CuGaS2 absorber and CuGaS2/Cd1-xZnxS buffer heterointerface for solar cell application

In realizing wide-bandgap CuGaS2 (CGS) based solar cells, CGS thin film deposition methods and suitable n-type buffer layers need to be studied. Even though belongs the same chalcopyrite family as more extensively-studied Cu(In,Ga)Se2, their different nature of defects band profile require a thin-film approach well careful tuning alignment at p-n heterojunction. This study focuses on material properties sputter-grown films absorber layer heterointerface between Cd1-xZnxS layer. A moderate amount Zn is found effective in widening bandgap while suppressing undesirable absorption loss high energy photons. Improved optical structural photocurrent generation are observed from cell structure with